DMP210DUFB4 Todos los transistores

 

DMP210DUFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP210DUFB4

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Conductancia de drenaje-sustrato (Cd): 13.72 pF

Resistencia drenaje-fuente RDS(on): 5.5 Ohm

Empaquetado / Estuche: X2DFN10063

Búsqueda de reemplazo de MOSFET DMP210DUFB4

 

DMP210DUFB4 Datasheet (PDF)

2.1. dmp210dudj.pdf Size:440K _diodes

DMP210DUFB4
DMP210DUFB4

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0? @ -4.5V o 7.0? @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10? @ -1.8V Terminal Connections: See Diagram o 15? @ -1.5V Ter

4.1. dmp2100u.pdf Size:193K _update-mosfet

DMP210DUFB4
DMP210DUFB4

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID  Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25°C  Low Input Capacitance 38mΩ @ VGS = -10V -4.3A  Fast Switching Speed -20V 43mΩ @ VGS = -4.5V SOT23 -4.0A  Low Input/Output Leakage 75mΩ @ VGS = -2.5V -2.8A  ESD Protected Up To 3kV  Totally Lead-Free & Fully RoHS Compl

4.2. dmp2100ucb9.pdf Size:422K _update-mosfet

DMP210DUFB4
DMP210DUFB4

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) Features and Benefits  LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80mΩ to Minimize On-State Losses -20V 80mΩ 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential  CSP with Footpr

 4.3. dmp2104v.pdf Size:178K _diodes

DMP210DUFB4
DMP210DUFB4

DMP2104V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-563 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals Connections: See Diag

4.4. dmp2104lp.pdf Size:317K _diodes

DMP210DUFB4
DMP210DUFB4

DMP2104LP P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: DFN1411-3 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminal Connections: See

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top