DMP210DUFB4 - аналоги, параметры транзистора - Справочник транзисторов

DMP210DUFB4 даташит

..1. Size:400K diodes
dmp210dufb4.pdf pdf_icon

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

6.1. Size:440K diodes
dmp210dudj.pdf pdf_icon

DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case SOT-963 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections See Diagra

8.1. Size:193K diodes
dmp2100u.pdf pdf_icon

DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

8.2. Size:422K diodes
dmp2100ucb9.pdf pdf_icon

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr