DMP21D0UFB4 Todos los transistores

 

DMP21D0UFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP21D0UFB4

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.99 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 0.86 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: X2DFN10063

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DMP21D0UFB4 Datasheet (PDF)

1.1. dmp21d0ufd.pdf Size:230K _update-mosfet

DMP21D0UFB4
DMP21D0UFB4

A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low Gate Threshold Voltage ID max • Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25°C (Notes 4) • ESD Protected Gate 3KV 495mΩ @ VGS = -4.5V -1.14A • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “G

2.1. dmp21d0ut.pdf Size:164K _update-mosfet

DMP21D0UFB4
DMP21D0UFB4

A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Footprint of just 3mm2 – less than half the size of SOT23 ID Max • 0.8mm profile – ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25°C • Low Gate Threshold Voltage (Note 4) • Fast Switching Speed • ESD Protected Gate

 4.1. dmp21d5ufd.pdf Size:185K _update-mosfet

DMP21D0UFB4
DMP21D0UFB4

DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features • Low On-Resistance ID V(BR)DSS RDS(ON) max Package • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25°C • Low Input Capacitance 1.0Ω @ VGS = -4.5V -600mA • Fast Switching Speed 1.5Ω @ VGS = -2.5V -500mA • ESD Protected Gate -20V X1-DFN1212-3 2.0Ω @ VGS = -1.8V -400mA • Tot

4.2. dmp21d5ufb4.pdf Size:244K _update-mosfet

DMP21D0UFB4
DMP21D0UFB4

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance ID V(BR)DSS RDS(on) max • Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25°C • Low Input Capacitance • Fast Switching Speed 1.0Ω @ VGS = -4.5V -700mA • Ultra-Small Surfaced Mount Package 1.5Ω @ VGS = -2.5V -600mA • Ultra-low package profile, 0.4

 4.3. dmp21d2ufa.pdf Size:342K _update-mosfet

DMP21D0UFB4
DMP21D0UFB4

DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits  Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max  0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25°C 1.0Ω @ VGS = -4.5V  Low On-Resistance 1.2Ω @ VGS = -2.5V  Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6Ω @ VG

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