DMP21D0UFB4
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP21D0UFB4
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.99
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7
V
|Id|ⓘ - Maximum Drain Current: 0.86
A
Qgⓘ - Total Gate Charge: 1
nC
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package: X2DFN10063
DMP21D0UFB4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP21D0UFB4
Datasheet (PDF)
..1. Size:394K diodes
dmp21d0ufb4.pdf 
DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 13 times smaller than SOT23 V(BR)DSS RDS(ON) ID @ TA = +25C 0.4mm Profile Ideal for Low Profile Applications -0.77A 495m @ VGS = -4.5V Low Gate Threshold Voltage -20V 690m @ VGS = -2.5V -0.67A Fast Switching Speed ESD Protected
5.1. Size:230K diodes
dmp21d0ufd.pdf
A Product Line ofDiodes IncorporatedDMP21D0UFD20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G
6.1. Size:164K diodes
dmp21d0ut.pdf
A Product Line ofDiodes IncorporatedDMP21D0UT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate
Datasheet: DMP210DUFB4
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