2SK660 Todos los transistores

 

2SK660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK660

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.1 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1000 Ohm

Empaquetado / Estuche: SST

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2SK660 Datasheet (PDF)

1.1. 2sk660.pdf Size:38K _nec

2SK660
2SK660

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance | yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Includes diode and h

5.1. 2sk669.pdf Size:61K _sanyo

2SK660
2SK660

Ordering number:EN2563C N-Channel Enhancement Silicon MOSFET 2SK669 Very High-Speed Switch, Analog Switch Applications Applications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speed unit:mm switches. 2040A [2SK669] 2.2 4.0 Features Large ? yfs? . Enhancemet type. 0.4 0.5 Small ON resistance. 0.4 0.4 1 2 3 1 : Drain 1.3 1.3 2 : Source 3 : Gat

5.2. 2sk664.pdf Size:34K _panasonic

2SK660
2SK660

Silicon MOS FETs (Small Signal) 2SK664 2SK664 Silicon N-Channel MOS Unit : mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Downsizing of sets by S-mini type package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 Symbol Parameter Rating Unit VDS Drain-Source breakdown voltage

 5.3. 2sk665.pdf Size:35K _panasonic

2SK660
2SK660

Silicon MOS FETs (Small Signal) 2SK665 2SK665 Silicon N-Channel MOS Unit : mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage 3 2 Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 Parameter Symbol Rating Unit Drain-Source voltage VDS 20 V 1 : Gate Gate

5.4. 2sk663.pdf Size:30K _panasonic

2SK660
2SK660

Silicon Junction FETs (Small Signal) 2SK663 2SK663 Silicon N-Channel Junction Unit : mm For low-frequency amplification 2.1 0.1 For switching 0.425 1.25 0.1 0.425 Features 1 High mutual conductance gm Low noise type 3 Downsizing of sets by S-mini type package and automatic insertion 2 by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 P

 5.5. 2sk662.pdf Size:30K _panasonic

2SK660
2SK660

Silicon Junction FETs (Small Signal) 2SK662 2SK662 Silicon N-Channel Junction Unit : mm For low-frequency amplification 2.1 0.1 0.425 1.25 0.1 0.425 Features High mutual conductance gm 1 Low noise type Downsizing of sets by S-mini type package and automatic insertion 3 by taping/magazine packing are available. 2 Absolute Maximum Ratings (Ta = 25?C) 0.2 0.1 Parameter Symbol

Otros transistores... 2SK514 , 2SK518 , 2SK519 , 2SK523 , 2SK533 , 2SK611 , 2SK612 , 2SK654 , IRFZ48N , 2SK679A , 2SK680A , 2SK681A , 2SK699 , 2SK700 , 2SK701 , 2SK702 , 2SK703 .

 

 
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