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ZXM61P02F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM61P02F

Código: P02

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.625 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 0.9 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 150 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: SOT23

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ZXM61P02F Datasheet (PDF)

1.1. zxm61p02ftc.pdf Size:442K _upd-mosfet

ZXM61P02F
ZXM61P02F

A Product Line of Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Fast switching speed ID • Low on-resistance V(BR)DSS RDS(on) TA = 25°C • Low threshold • Low gate drive 600mΩ @ VGS = -4.5V -0.92A • “Lead Free”, RoHS Compliant (Note 1) -20V 900mΩ @ VGS = -2.7V -0.75A • Halogen and Antimo

1.2. zxm61p02fta.pdf Size:442K _upd-mosfet

ZXM61P02F
ZXM61P02F

A Product Line of Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Fast switching speed ID • Low on-resistance V(BR)DSS RDS(on) TA = 25°C • Low threshold • Low gate drive 600mΩ @ VGS = -4.5V -0.92A • “Lead Free”, RoHS Compliant (Note 1) -20V 900mΩ @ VGS = -2.7V -0.75A • Halogen and Antimo

 1.3. zxm61p02f.pdf Size:198K _diodes

ZXM61P02F
ZXM61P02F

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.60 ; I =-0.9A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-resist

1.4. zxm61p02f.pdf Size:224K _tysemi

ZXM61P02F
ZXM61P02F

Product specification ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Fast switching speed ID • Low on-resistance V(BR)DSS RDS(on) TA = 25°C • Low threshold • Low gate drive 600mΩ @ VGS = -4.5V -0.92A • “Lead Free”, RoHS Compliant (Note 1) -20V 900mΩ @ VGS = -2.7V -0.75A • Halogen and Antimony Free. "Green"

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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