ZXM61P02F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXM61P02F
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET ZXM61P02F

ZXM61P02F Datasheet (PDF)

..1. Size:198K diodes
zxm61p02f.pdf

ZXM61P02F20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.60 ; I =-0.9A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-r

..2. Size:224K tysemi
zxm61p02f.pdf

Product specificationZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"

0.1. Size:442K diodes
zxm61p02fta zxm61p02ftc.pdf

A Product Line ofDiodes IncorporatedZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo

0.2. Size:907K cn vbsemi
zxm61p02ftc.pdf

ZXM61P02FTCwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

7.1. Size:270K diodes
zxm61p03f.pdf

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT

7.2. Size:92K tysemi
zxm61p03f.pdf

Product specificationZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from TY utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Lo

7.3. Size:269K zetex
zxm61p03ftc.pdf