ZXM61P02F Todos los transistores

 ..1. Size:198K  diodes
 zxm61p02f.pdf

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.60 ; I =-0.9A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-r

 ..2. Size:224K  tysemi
 zxm61p02f.pdf

Product specification ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"

 0.1. Size:442K  diodes
 zxm61p02fta zxm61p02ftc.pdf

A Product Line of Diodes Incorporated ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25 C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free , RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo

 0.2. Size:907K  cn vbsemi
 zxm61p02ftc.pdf

ZXM61P02FTC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

 7.1. Size:270K  diodes
 zxm61p03f.pdf

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT

 7.2. Size:92K  tysemi
 zxm61p03f.pdf

Product specification ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Lo

 7.3. Size:269K  zetex
 zxm61p03ftc.pdf

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT

 7.4. Size:269K  zetex
 zxm61p03fta.pdf

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT