Справочник MOSFET. ZXM61P02F

 

ZXM61P02F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXM61P02F
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.9 A
   Cossⓘ - Выходная емкость: 150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: SOT23
     - подбор MOSFET транзистора по параметрам

 

ZXM61P02F Datasheet (PDF)

 ..1. Size:198K  diodes
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ZXM61P02F

ZXM61P02F20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.60 ; I =-0.9A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-r

 ..2. Size:224K  tysemi
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ZXM61P02F

Product specificationZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimony Free. "Green"

 0.1. Size:442K  diodes
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ZXM61P02F

A Product Line ofDiodes IncorporatedZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID Low on-resistance V(BR)DSS RDS(on) TA = 25C Low threshold Low gate drive 600m @ VGS = -4.5V -0.92A Lead Free, RoHS Compliant (Note 1) -20V 900m @ VGS = -2.7V -0.75A Halogen and Antimo

 0.2. Size:907K  cn vbsemi
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ZXM61P02F

ZXM61P02FTCwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

Другие MOSFET... DMP21D0UFB , DMP21D0UFB4 , DMP2215L , DMP2225L , DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , 12N60 , ZXM62P02E6 , ZXM62P03E6 , ZXM64P02X , ZXM66P02N8 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS .

History: TK13A25D | BUZ171 | HM5N60I | SWB036R10E8S | 1N50Z | IPB057N06N | UPA1759

 

 
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