ZXM62P02E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM62P02E6
Código: 2P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.1 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 2.3 A
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia drenaje-fuente RDS(on): 0.2 Ohm
Empaquetado / Estuche: SOT26
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ZXM62P02E6 Datasheet (PDF)
1.1. zxm62p02e6ta.pdf 
Size:176K _upd-mosfet
ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low o
1.2. zxm62p02e6.pdf Size:178K _diodes
ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-res
3.1. zxm62p03gta.pdf Size:286K _upd-mosfet
ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance
3.2. zxm62p03e6ta.pdf Size:285K _upd-mosfet
ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance •
3.3. zxm62p03e6.pdf Size:281K _diodes
ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw
Otros transistores... DMP21D0UFB4 , DMP2215L , DMP2225L , DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , IRFZ48N , ZXM62P03E6 , ZXM64P02X , ZXM66P02N8 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS .
Liste
Recientemente añadidas las descripciónes de los transistores:
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