ZXM62P02E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM62P02E6

Código: 2P02

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 2.3 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 320 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: SOT26

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ZXM62P02E6 Datasheet (PDF)

1.1. zxm62p02e6ta.pdf Size:176K _upd-mosfet

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low o

1.2. zxm62p02e6.pdf Size:178K _diodes

3.1. zxm62p03gta.pdf Size:286K _upd-mosfet

ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance

3.2. zxm62p03e6ta.pdf Size:285K _upd-mosfet

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance •

3.3. zxm62p03e6.pdf Size:281K _diodes