ZXM62P02E6 MOSFET Datasheet: P-Ch, 20V, 2.3A. Full specification with pinout and replacement list

ZXM62P02E6 Specs and Replacement

Type Designator: ZXM62P02E6

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT26

ZXM62P02E6 substitution

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ZXM62P02E6 datasheet

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ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.20 ; I =-2.3A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low o... See More ⇒

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ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance ... See More ⇒

7.2. Size:286K zetex
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ZXM62P03G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V RDS(on) = 0.15 ID = -4.0A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance... See More ⇒