2SK679A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK679A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.75 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de MOSFET 2SK679A

2SK679A Datasheet (PDF)

4.1. 2sk679.pdf Size:414K _nec

5.1. 2sk678.pdf Size:61K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK678 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed APPLICATIONS ·High voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

5.2. 2sk673.pdf Size:71K _update

5.3. 2sk672.pdf Size:61K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK672 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA

5.4. 2sk674.pdf Size:70K _update

5.5. 2sk678.pdf Size:235K _update-mosfet

isc N-Channel MOSFET Transistor 2SK678 DESCRIPTION ·Drain Current –I =13A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor

Otros transistores... 2SK518 , 2SK519 , 2SK523 , 2SK533 , 2SK611 , 2SK612 , 2SK654 , 2SK660 , 2SK3569 , 2SK680A , 2SK681A , 2SK699 , 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 .

Liste

Recientemente añadidas las descripciónes de los transistores: