2SK679A Datasheet and Replacement
Type Designator: 2SK679A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO92
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2SK679A Datasheet (PDF)
2sk674.pdf
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2sk672.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK672 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA
Datasheet: 2SK518 , 2SK519 , 2SK523 , 2SK533 , 2SK611 , 2SK612 , 2SK654 , 2SK660 , AO4407 , 2SK680A , 2SK681A , 2SK699 , 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 .
History: IPD65R950C6 | HM60N04 | STK0760P | MXP65D7AT | 2SJ655 | SVF18N65T | SFS2955
Keywords - 2SK679A MOSFET datasheet
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History: IPD65R950C6 | HM60N04 | STK0760P | MXP65D7AT | 2SJ655 | SVF18N65T | SFS2955
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