2SK679A Specs and Replacement

Type Designator: 2SK679A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO92

2SK679A substitution

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2SK679A datasheet

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2SK679A

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 9.1. Size:71K  toshiba
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2SK679A

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 9.2. Size:70K  toshiba
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2SK679A

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 9.3. Size:61K  inchange semiconductor
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2SK679A

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK672 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Designed for high Current, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA... See More ⇒

Detailed specifications: 2SK518, 2SK519, 2SK523, 2SK533, 2SK611, 2SK612, 2SK654, 2SK660, IRF4905, 2SK680A, 2SK681A, 2SK699, 2SK700, 2SK701, 2SK702, 2SK703, 2SK705

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