ZXMD63P03X Todos los transistores

 

ZXMD63P03X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMD63P03X

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 270 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: MSOP8

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ZXMD63P03X Datasheet (PDF)

1.1. zxmd63p03x.pdf Size:339K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resist

2.1. zxmd63p02x.pdf Size:204K _diodes

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ZXMD63P03X

ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 4.1. zxmd63c02x.pdf Size:204K _upd-mosfet

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ZXMD63P03X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

4.2. zxmd63c02x.pdf Size:322K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency,

 4.3. zxmd63n02x.pdf Size:156K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13?; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-re

4.4. zxmd63n03x.pdf Size:332K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistan

 4.5. zxmd63c03x.pdf Size:378K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage

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