ZXMD63P03X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXMD63P03XDUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-r

ZXMD63P02XDUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo

ZXMD63N03XDUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Low on-res

ZXMD63N02XDUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.13; I =2.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.MSOP8FEATURES Lo

ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien

ZXMD63C03X30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3AP-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low volt

ZXMD63C02X20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYN-CHANNEL: V =20V; R =0.13 ; I =2.4A(BR)DSS DS(ON) DP-CHANNEL: V =-20V; R =0.27 ; I =-1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficien