Справочник MOSFET. ZXMD63P03X

 

ZXMD63P03X MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: ZXMD63P03X

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.25 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 2 A

Выходная емкость (Cd): 270 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.27 Ohm

Тип корпуса: MSOP8

Аналог (замена) для ZXMD63P03X

 

 

ZXMD63P03X Datasheet (PDF)

1.1. zxmd63p03x.pdf Size:339K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63P03X DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-r

2.1. zxmd63p02x.pdf Size:204K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Lo

 4.1. zxmd63c02x.pdf Size:322K _diodes

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ZXMD63P03X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

4.2. zxmd63n03x.pdf Size:332K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-res

 4.3. zxmd63n02x.pdf Size:156K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.13Ω; I =2.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Lo

4.4. zxmd63c03x.pdf Size:378K _diodes

ZXMD63P03X
ZXMD63P03X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low volt

 4.5. zxmd63c02x.pdf Size:204K _zetex

ZXMD63P03X
ZXMD63P03X

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V =20V; R =0.13 ; I =2.4A (BR)DSS DS(ON) D P-CHANNEL: V =-20V; R =0.27 ; I =-1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficien

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