2SK699 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK699

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 15 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1 Ohm

Empaquetado / Estuche: MP5

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2SK699 Datasheet (PDF)

5.1. 2sk694.pdf Size:72K _update

5.2. 2sk696.pdf Size:139K _update

查询"2SK696"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK696"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK696"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003 查询"2SK696"供应商 Powered by ICminer.com Electronic-Library Service CopyRight 2003

5.3. 2sk695.pdf Size:45K _update

5.4. 2sk693.pdf Size:163K _update

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5.5. 2sk690.pdf Size:32K _panasonic

High Frequency FETs 2SK690 2SK690 GaAs N-Channel MES Unit : mm For UHF medium-output power amplification 1.5� 0.1 4.5� 0.1 1.6� 0.2 Features Large collector dissipation PC 45? Downsizing of sets by mini power package and automatic insertion by magazine packing are available. 0.4� 0.08 0.4� 0.04 0.5� 0.08 1.5� 0.1 3.0� 0.15 3 2 1 Absolute Maximum Ratings (Ta = 25?C) Paramete

Otros transistores... 2SK533 , 2SK611 , 2SK612 , 2SK654 , 2SK660 , 2SK679A , 2SK680A , 2SK681A , IRF9540 , 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 .

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