2SK699 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK699
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO126
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2SK699 Datasheet (PDF)
2sk690.pdf

High Frequency FETs 2SK6902SK690GaAs N-Channel MESUnit : mmFor UHF medium-output power amplification1.5 0.14.5 0.11.6 0.2 Features Large collector dissipation PC45 Downsizing of sets by mini power package and automatic insertionby magazine packing are available.0.4 0.080.4 0.040.5 0.081.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta = 25
2sk696.pdf

"2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003
2sk693.pdf

isc N-Channel MOSFET Transistor 2SK693DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE
Otros transistores... 2SK533 , 2SK611 , 2SK612 , 2SK654 , 2SK660 , 2SK679A , 2SK680A , 2SK681A , SPP20N60C3 , 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 .
History: SWY4N60D | IRF6215L | NCEP40T14A | IRF1010EL | IPB65R190CFDA | IXFE180N10 | IPD80R280P7
History: SWY4N60D | IRF6215L | NCEP40T14A | IRF1010EL | IPB65R190CFDA | IXFE180N10 | IPD80R280P7



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