2SK699 - Даташиты. Аналоги. Основные параметры

High Frequency FETs 2SK6902SK690GaAs N-Channel MESUnit : mmFor UHF medium-output power amplification1.5 0.14.5 0.11.6 0.2 Features Large collector dissipation PC45 Downsizing of sets by mini power package and automatic insertionby magazine packing are available.0.4 0.080.4 0.040.5 0.081.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta = 25

"2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK696"Powered by ICminer.com Electronic-Library Service CopyRight 2003

isc N-Channel MOSFET Transistor 2SK693DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE

isc N-Channel MOSFET Transistor 2SK695DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK694DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed.high Current switching applications.DC converter and motor drive applications.ABSOLUTE