ZXMP4A16G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP4A16G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1007 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de ZXMP4A16G MOSFET
ZXMP4A16G Datasheet (PDF)
zxmp4a16g.pdf

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc
zxmp4a16gta.pdf

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc
zxmp4a16k.pdf

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance
zxmp4a16ktc.pdf

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance
Otros transistores... BSS84W , DMP4050SSD , DMP4050SSS , DMP4051LK3 , DMP57D5UFB , DMP57D5UV , DMP58D0SV , ZXM64P035L3 , MMIS60R580P , ZXMP4A16K , ZXMP4A57E6 , ZXMP6A13F , ZXMP6A13G , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 .
History: BL4N80-D | S15H12S | CEM6600 | UML2502G-AE3-R | HGA170N10AL | BLP055N09G-P
History: BL4N80-D | S15H12S | CEM6600 | UML2502G-AE3-R | HGA170N10AL | BLP055N09G-P



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