Справочник MOSFET. ZXMP4A16G

 

ZXMP4A16G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMP4A16G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 3.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
   Cossⓘ - Выходная емкость: 1007 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

ZXMP4A16G Datasheet (PDF)

 ..1. Size:271K  diodes
 zxmp4a16g.pdf pdf_icon

ZXMP4A16G

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc

 0.1. Size:270K  zetex
 zxmp4a16gta.pdf pdf_icon

ZXMP4A16G

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc

 6.1. Size:576K  diodes
 zxmp4a16k.pdf pdf_icon

ZXMP4A16G

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance

 6.2. Size:574K  zetex
 zxmp4a16ktc.pdf pdf_icon

ZXMP4A16G

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance

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History: PMV30UN | MDP5N50BTH | CEM3301 | 2SK3404 | FDS6961A | RJK1560DPP-M0 | 2SK2882

 

 
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