ZXMP4A57E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMP4A57E6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 15.8 nC
   Cossⓘ - Capacitancia de salida: 833 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT26

Búsqueda de reemplazo de MOSFET ZXMP4A57E6

ZXMP4A57E6 Datasheet (PDF)

0.1. Size:659K diodes
zxmp4a57e6ta.pdf

A Product Line ofDiodes IncorporatedZXMP4A57E640V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25C Low input capacitance Lead Free, RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu

8.1. Size:271K diodes
zxmp4a16g.pdf

ZXMP4A16G40V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT223FEATURES Low on-resistanc

8.2. Size:576K diodes
zxmp4a16k.pdf

ZXMP4A16K40V P-channel enhancement mode MOSFETSummary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9ADescription This new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,power management applications. Features D Low on-resistance

8.3. Size:574K zetex
zxmp4a16ktc.pdf