ZXMP4A57E6 Todos los transistores

 

ZXMP4A57E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP4A57E6

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 833 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: SOT26

 Búsqueda de reemplazo de ZXMP4A57E6 MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZXMP4A57E6 datasheet

 0.1. Size:659K  diodes
 zxmp4a57e6ta.pdf pdf_icon

ZXMP4A57E6

A Product Line of Diodes Incorporated ZXMP4A57E6 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25 C Low input capacitance Lead Free , RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu

 8.1. Size:271K  diodes
 zxmp4a16g.pdf pdf_icon

ZXMP4A57E6

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V RDS(on) = 0.060 ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistanc

 8.2. Size:576K  diodes
 zxmp4a16k.pdf pdf_icon

ZXMP4A57E6

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance

 8.3. Size:574K  zetex
 zxmp4a16ktc.pdf pdf_icon

ZXMP4A57E6

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance

MOSTRAR MÁS

Otros transistores... DMP4050SSS , DMP4051LK3 , DMP57D5UFB , DMP57D5UV , DMP58D0SV , ZXM64P035L3 , ZXMP4A16G , ZXMP4A16K , IRFZ46N , ZXMP6A13F , ZXMP6A13G , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , ZXMP6A17K .

History: FQB7P20 | DMG3N60SJ3

 

 

 

 

↑ Back to Top
.