ZXMP4A57E6 MOSFET Datasheet: P-Ch, 40V, 3.7A. Full specification with pinout and replacement list

ZXMP4A57E6 Specs and Replacement

   Type Designator: ZXMP4A57E6
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 833 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT26

ZXMP4A57E6 substitution

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ZXMP4A57E6 datasheet

0.1. Size:659K diodes
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A Product Line of Diodes Incorporated ZXMP4A57E6 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID max Low gate drive V(BR)DSS RDS(on) max TA = 25 C Low input capacitance Lead Free , RoHS Compliant (Note 1) 80m @ VGS= -10V -3.7 A Halogen and Antimony Free. "Green" Device (Note 2) -40V Qu... See More ⇒

8.1. Size:271K diodes
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ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -40V RDS(on) = 0.060 ID = -6.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistanc... See More ⇒

8.2. Size:576K diodes
zxmp4a16k.pdf pdf_icon

ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V(BR)DSS= -40V; RDS(ON)= 0.060 ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance ... See More ⇒

8.3. Size:574K zetex
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