ZXMP6A13G Todos los transistores

 

ZXMP6A13G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP6A13G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 219 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.595 Ohm

Encapsulados: SOT223

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ZXMP6A13G datasheet

 ..1. Size:686K  diodes
zxmp6a13g.pdf pdf_icon

ZXMP6A13G

A Product Line of Diodes Incorporated ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 390m @ VGS= -10V -2.3A Qualified to AEC-Q101 Standards for High Reliability -60V

 0.1. Size:652K  diodes
zxmp6a13gta.pdf pdf_icon

ZXMP6A13G

A Product Line of Diodes Incorporated ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free , RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =

 6.1. Size:282K  diodes
zxmp6a13fq.pdf pdf_icon

ZXMP6A13G

ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25 C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu

 6.2. Size:294K  diodes
zxmp6a13f.pdf pdf_icon

ZXMP6A13G

A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25 C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1

Otros transistores... DMP57D5UFB , DMP57D5UV , DMP58D0SV , ZXM64P035L3 , ZXMP4A16G , ZXMP4A16K , ZXMP4A57E6 , ZXMP6A13F , IRLB3034 , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 .

History: MDP13N50TH

 

 

 

 

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