Справочник MOSFET. ZXMP6A13G

 

ZXMP6A13G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP6A13G
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 3.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 2.3 A
   Общий заряд затвора (Qg): 2.9 nC
   Выходная емкость (Cd): 219 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.595 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для ZXMP6A13G

 

 

ZXMP6A13G Datasheet (PDF)

 ..1. Size:686K  diodes
zxmp6a13g.pdf

ZXMP6A13G ZXMP6A13G

A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS= -10V -2.3A Qualified to AEC-Q101 Standards for High Reliability -60V

 0.1. Size:652K  diodes
zxmp6a13gta.pdf

ZXMP6A13G ZXMP6A13G

A Product Line ofDiodes IncorporatedZXMP6A13G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 390m @ VGS = -10V -2.3A Lead Free, RoHS Compliant (Note 1) -60V Halogen and Antimony Free. "Green" Device (Note 2) 595m @ VGS =

 6.1. Size:282K  diodes
zxmp6a13fq.pdf

ZXMP6A13G ZXMP6A13G

ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = +25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free. Green Device (Note 3) Qu

 6.2. Size:294K  diodes
zxmp6a13f.pdf

ZXMP6A13G ZXMP6A13G

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID Low input capacitance V(BR)DSS RDS(on) TA = 25C Low gate charge Qualified to AEC-Q101 Standards for High Reliability 400m @ VGS= -10V 400m = -1

 6.3. Size:317K  diodes
zxmp6a13fta.pdf

ZXMP6A13G ZXMP6A13G

A Product Line ofDiodes IncorporatedZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max ID V(BR)DSS Max RDS(on) Low input capacitance TA = 25C Low gate charge 400m @ VGS = -10V -1.1A -60V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 600m @ VGS = -4.5V -0.9A Halogen and Antimony Free.

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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