ZXMP6A18K Todos los transistores

 

ZXMP6A18K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP6A18K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.4 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO252 DPAK

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ZXMP6A18K datasheet

 ..1. Size:583K  diodes
zxmp6a18k.pdf pdf_icon

ZXMP6A18K

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

 0.1. Size:580K  zetex
zxmp6a18ktc.pdf pdf_icon

ZXMP6A18K

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-

 0.2. Size:882K  cn vbsemi
zxmp6a18ktc.pdf pdf_icon

ZXMP6A18K

ZXMP6A18KTC www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge

 6.1. Size:183K  diodes
zxmp6a18dn8.pdf pdf_icon

ZXMP6A18K

ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan

Otros transistores... ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 , AO4407A , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , ZVP4525Z , ZXMP10A13F , ZXMP10A16K .

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History: IVN5001ANH

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