ZXMP6A18K MOSFET Datasheet: P-Ch, 60V, 10.4A. Full specification with pinout and replacement list

ZXMP6A18K Specs and Replacement

   Type Designator: ZXMP6A18K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 10.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.4 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 1580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252 DPAK

ZXMP6A18K substitution

- MOSFET ⓘ Cross-Reference Search

ZXMP6A18K datasheet

..1. Size:583K diodes
zxmp6a18k.pdf pdf_icon

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-... See More ⇒

0.1. Size:580K zetex
zxmp6a18ktc.pdf pdf_icon

0.2. Size:882K cn vbsemi
zxmp6a18ktc.pdf pdf_icon

ZXMP6A18KTC www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge ... See More ⇒

6.1. Size:183K diodes
zxmp6a18dn8.pdf pdf_icon

ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan... See More ⇒