ZXMP7A17G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP7A17G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de ZXMP7A17G MOSFET
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ZXMP7A17G datasheet
zxmp7a17g.pdf
ZXMP7A17G 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=3.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas
zxmp7a17gta.pdf
ZXMP7A17G 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=3.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas
zxmp7a17k.pdf
ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V RDS(on)=0.16 ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance G Fas
Otros transistores... ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , 60N06 , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , ZVP4525Z , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 .
History: RV1C002UN
History: RV1C002UN
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