ZXMP7A17G
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMP7A17G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3.9
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 3.7
A
Qgⓘ -
Общий заряд затвора: 9.6
nC
Cossⓘ - Выходная емкость: 635
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25
Ohm
Тип корпуса:
SOT223
Аналог (замена) для ZXMP7A17G
ZXMP7A17G
Datasheet (PDF)
..1. Size:428K diodes
zxmp7a17g.pdf ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
0.1. Size:662K diodes
zxmp7a17gq.pdf ZXMP7A17GQ Green70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS RDS(on) TA = +25C Low On-Resistance Fast Switching Speed 160m @ VGS= -10V -2.6A -70V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 250m @ VGS= -4.5V -1.6A Halogen and Antimony Free.
0.2. Size:426K zetex
zxmp7a17gta.pdf ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
6.1. Size:532K diodes
zxmp7a17k.pdf ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
6.2. Size:529K zetex
zxmp7a17ktc.pdf ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas
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