ZVP4525E6 Todos los transistores

 

ZVP4525E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVP4525E6
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.197 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT26
 

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ZVP4525E6 Datasheet (PDF)

 ..1. Size:411K  diodes
 zvp4525e6.pdf pdf_icon

ZVP4525E6

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 0.1. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525E6

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525E6

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525E6

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

MOSTRAR MÁS

Otros transistores... ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , BS170 , ZVP4525G , ZVP4525Z , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G .

History: WMB35P04T1 | SSM6J512NU | IRLML5203GPBF | APTM50HM75SCTG | STP200N4F3 | IRF6725MPBF | HFP70N03V

 

 
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