ZVP4525E6 - описание и поиск аналогов

 

ZVP4525E6. Аналоги и основные параметры

Наименование производителя: ZVP4525E6

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.197 A

Электрические характеристики

Cossⓘ - Выходная емкость: 73 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm

Тип корпуса: SOT26

Аналог (замена) для ZVP4525E6

- подборⓘ MOSFET транзистора по параметрам

 

ZVP4525E6 даташит

 ..1. Size:411K  diodes
 zvp4525e6.pdf pdf_icon

ZVP4525E6

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 0.1. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525E6

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525E6

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525E6

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

ПОКАЗАТЬ ЕЩЁ

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History: ZXMHC3A01N8

 

 

 

 

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