ZVP4525Z Todos los transistores

 

ZVP4525Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVP4525Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.205 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 73 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT893L
 

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ZVP4525Z Datasheet (PDF)

 ..1. Size:137K  diodes
 zvp4525z.pdf pdf_icon

ZVP4525Z

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 0.1. Size:132K  diodes
 zvp4525zta.pdf pdf_icon

ZVP4525Z

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525Z

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525Z

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

MOSTRAR MÁS

Otros transistores... ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , IRF3205 , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , ZXMP2120E5 .

History: PTA04N100 | SQM120N02-1M3L | IRFNG40 | FIR120N055PG | ST2342 | RUH1H150S-AR | SM1A11NSF

 

 
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