All MOSFET. ZVP4525Z Datasheet

 

ZVP4525Z Datasheet and Replacement


   Type Designator: ZVP4525Z
   Marking Code: P52
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 0.205 A
   Qg ⓘ - Total Gate Charge: 2.45 nC
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT893L
 

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ZVP4525Z Datasheet (PDF)

 ..1. Size:137K  diodes
 zvp4525z.pdf pdf_icon

ZVP4525Z

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 0.1. Size:132K  diodes
 zvp4525zta.pdf pdf_icon

ZVP4525Z

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525Z

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525Z

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

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Datasheet: ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , IRF3205 , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , ZXMP2120E5 .

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