ZXMP2120E5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP2120E5
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.122 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 28 Ohm
Encapsulados: SOT25
Búsqueda de reemplazo de ZXMP2120E5 MOSFET
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ZXMP2120E5 datasheet
zxmp2120e5.pdf
ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device inclu
zxmp2120e5ta.pdf
ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device inclu
zxmp2120g4.pdf
ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ
zxmp2120ff.pdf
ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from
Otros transistores... ZVP4525Z , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , IRFZ44 , ZXMP2120FF , ZXMP2120G4 , DMC2004DWK , DMC2004LPK , DMC2004VK , DMC2020USD , DMG1016UDW , DMG1016V .
History: 2SK2033 | DH012N03B
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