ZXMP2120E5 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMP2120E5
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.75 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 0.122 A
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 28 Ohm
Package: SOT25
ZXMP2120E5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMP2120E5 Datasheet (PDF)
zxmp2120e5.pdf
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ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu
zxmp2120e5ta.pdf
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ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu
zxmp2120g4.pdf
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ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ
zxmp2120ff.pdf
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ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from
zxmp2120g4ta.pdf
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ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ
zxmp2120ffta.pdf
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ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from
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