ZXMP2120FF Todos los transistores

 

ZXMP2120FF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP2120FF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.137 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 28 Ohm

Encapsulados: SOT23

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ZXMP2120FF datasheet

 ..1. Size:417K  diodes
 zxmp2120ff.pdf pdf_icon

ZXMP2120FF

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from

 0.1. Size:413K  zetex
 zxmp2120ffta.pdf pdf_icon

ZXMP2120FF

ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from

 6.1. Size:386K  diodes
 zxmp2120e5.pdf pdf_icon

ZXMP2120FF

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device inclu

 6.2. Size:416K  diodes
 zxmp2120g4.pdf pdf_icon

ZXMP2120FF

ZXMP2120G4 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device includ

MOSTRAR MÁS

Otros transistores... ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K , ZXMP2120E5 , IRF640 , ZXMP2120G4 , DMC2004DWK , DMC2004LPK , DMC2004VK , DMC2020USD , DMG1016UDW , DMG1016V , DMC3018LSD .

History: RZQ045P01TR | AS2102W

 

 

 


History: RZQ045P01TR | AS2102W

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