All MOSFET. ZXMP2120FF Datasheet

 

ZXMP2120FF Datasheet and Replacement


   Type Designator: ZXMP2120FF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.137 A
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 28 Ohm
   Package: SOT23
 

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ZXMP2120FF Datasheet (PDF)

 ..1. Size:417K  diodes
 zxmp2120ff.pdf pdf_icon

ZXMP2120FF

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

 0.1. Size:413K  zetex
 zxmp2120ffta.pdf pdf_icon

ZXMP2120FF

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

 6.1. Size:386K  diodes
 zxmp2120e5.pdf pdf_icon

ZXMP2120FF

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

 6.2. Size:416K  diodes
 zxmp2120g4.pdf pdf_icon

ZXMP2120FF

ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

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