ZXMC3A18DN8 Todos los transistores

 

ZXMC3A18DN8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMC3A18DN8

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.6 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SO8

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ZXMC3A18DN8 datasheet

 ..1. Size:686K  diodes
zxmc3a18dn8.pdf pdf_icon

ZXMC3A18DN8

ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V RDS(on)= 0.035 ; ID= -6.3A Description D1 D2 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes G1 G2 them ideal for high ef

 7.1. Size:280K  diodes
zxmc3a17dn8.pdf pdf_icon

ZXMC3A18DN8

ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS= 30V RDS(on)= 0.050 ; ID= 5.4A P-Channel V(BR)DSS= -30V RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltag

 7.2. Size:312K  diodes
zxmc3a16dn8.pdf pdf_icon

ZXMC3A18DN8

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,

 8.1. Size:731K  diodes
zxmc3amc.pdf pdf_icon

ZXMC3A18DN8

A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R JA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

Otros transistores... DMC3021LK4 , DMC3021LSD , DMC3028LSD , DMC3032LSD , DMC3036LSD , DMG6602SVT , ZXMC3A16DN8 , ZXMC3A17DN8 , IRF630 , ZXMC3AMC , ZXMC3F31DN8 , ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD , DMC4050SSD , ZXMC10A816N8 .

History: SWD7N60D | SW2N60 | SWD10N80K2 | IPP60R099P7 | 4N60L-TF1-T | AP02N60I | HCA70R180

 

 

 

 

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