ZXMC3A18DN8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMC3A18DN8
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 19.4 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO8

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ZXMC3A18DN8 Datasheet (PDF)

..1. Size:686K diodes
zxmc3a18dn8.pdf

ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef

7.1. Size:280K diodes
zxmc3a17dn8.pdf

ZXMC3A17DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4AP-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltag

7.2. Size:312K diodes
zxmc3a16dn8.pdf

ZXMC3A16DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,

8.1. Size:731K diodes
zxmc3amc.pdf

A Product Line ofDiodes IncorporatedZXMC3AMC30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

8.2. Size:724K diodes
zxmc3am832.pdf

OBSOLETE- PLEASE USE ZXMC3AMCTAZXMC3AM832MPPS Miniature Package Power SolutionsCOMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)outline this dual 30V N channel Trench MOSFET utilizes a unique stru

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