ZXMC3A18DN8 MOSFET Datasheet: NP-Ch, 30V, 7.6A. Full specification with pinout and replacement list

ZXMC3A18DN8 Specs and Replacement

Type Designator: ZXMC3A18DN8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO8

ZXMC3A18DN8 substitution

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ZXMC3A18DN8 datasheet

..1. Size:686K diodes
zxmc3a18dn8.pdf pdf_icon

ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V RDS(on)= 0.035 ; ID= -6.3A Description D1 D2 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes G1 G2 them ideal for high ef... See More ⇒

7.1. Size:280K diodes
zxmc3a17dn8.pdf pdf_icon

ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS= 30V RDS(on)= 0.050 ; ID= 5.4A P-Channel V(BR)DSS= -30V RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltag... See More ⇒

7.2. Size:312K diodes
zxmc3a16dn8.pdf pdf_icon

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,... See More ⇒

8.1. Size:731K diodes
zxmc3amc.pdf pdf_icon

A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R JA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi... See More ⇒