ZXMS6001N3 Todos los transistores

ZXMS6001N3 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Low Input Current On-State Resistance 675m Short-Circuit Protection with Auto Restart Max Nominal Load Current (VIN = 5V) 1.1A Overvoltage Protection (Active Clamp) Min Nominal Load Current (VIN

ZXMS6006SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Protection

Green ZXMS6006DT8Q 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

A Product Line of Diodes Incorporated ZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 90mJ Short Circ

A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-v

ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m Nominal load current (VIN = 5V) 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active S clamp) and ESD protected logi

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

Green ZXMS6006DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-te

ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 480mJ Description The ZXMS6004SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

A Product Line of Diodes Incorporated ZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

A Product Line of Diodes Incorporated ZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

ZXMS6002GQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET WITH STATUS INDICATION Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Status Pin (Analog Status Indication) On-State Resistance 500m Logic Level Input Nominal Load Current (VIN = 5V) 1.4A Short Circuit Protection with Auto Restart Clamping E

A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

SMD Type MOSFET Transistors N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Features SOT-23 Unit mm +0.1 2.9-0.1 Compact high power dissipation package +0.1 0.4 -0.1 Low input current 3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 Therm