Справочник MOSFET. ZXMS6001N3

 

ZXMS6001N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMS6001N3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.675 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для ZXMS6001N3

 

 

ZXMS6001N3 Datasheet (PDF)

 ..1. Size:751K  diodes
zxms6001n3.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6001N3 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V Low Input Current On-State Resistance: 675m Short-Circuit Protection with Auto Restart Max Nominal Load Current (VIN = 5V): 1.1A Overvoltage Protection (Active Clamp) Min Nominal Load Current (VIN

 7.1. Size:311K  diodes
zxms6006sgq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6006SGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Protection

 7.2. Size:276K  diodes
zxms6006dt8q.pdf

ZXMS6001N3
ZXMS6001N3

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 7.3. Size:241K  diodes
zxms6006dg.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 7.4. Size:247K  diodes
zxms6005dt8.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 7.5. Size:242K  diodes
zxms6005dgq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 7.6. Size:454K  diodes
zxms6004ffq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 90mJ Short Circ

 7.7. Size:414K  diodes
zxms6004ff.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes IncorporatedZXMS6004FF60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 90mJDescriptionThe ZXMS6004FF is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-v

 7.8. Size:783K  diodes
zxms6003g.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6003G60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limitSummaryContinuous drain source voltage VDS = 60VOn-state resistance 500m Nominal load current (VIN = 5V) 1.4AClamping energy 550mJDescriptionSelf protected low side MOSFET. Monolithic overtemperature, over current, over voltage (activeS clamp) and ESD protected logi

 7.9. Size:348K  diodes
zxms6005dt8q.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

 7.10. Size:479K  diodes
zxms6004dg.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 490mJDescriptionThe ZXMS6004DG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

 7.11. Size:340K  diodes
zxms6006dgq.pdf

ZXMS6001N3
ZXMS6001N3

GreenZXMS6006DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

 7.12. Size:556K  diodes
zxms6005dg.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

 7.13. Size:379K  diodes
zxms6004sgq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6004SGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

 7.14. Size:480K  diodes
zxms6004sg.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes IncorporatedZXMS6004SG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 480mJDescriptionThe ZXMS6004SG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

 7.15. Size:267K  diodes
zxms6006dt8.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line of Diodes IncorporatedZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

 7.16. Size:524K  diodes
zxms6005dgq-13.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 7.17. Size:243K  diodes
zxms6006sg.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line of Diodes IncorporatedZXMS6006SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 7.18. Size:530K  diodes
zxms6004dt8q.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

 7.19. Size:401K  diodes
zxms6005sgq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6005SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

 7.20. Size:626K  diodes
zxms6002gq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6002GQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET WITH STATUS INDICATION Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Status Pin (Analog Status Indication) On-State Resistance 500m Logic Level Input Nominal Load Current (VIN = 5V) 1.4A Short Circuit Protection with Auto Restart Clamping E

 7.21. Size:236K  diodes
zxms6004dt8.pdf

ZXMS6001N3
ZXMS6001N3

A Product Line ofDiodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 7.22. Size:425K  diodes
zxms6004dgq.pdf

ZXMS6001N3
ZXMS6001N3

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

 7.23. Size:504K  kexin
zxms6004ff.pdf

ZXMS6001N3
ZXMS6001N3

SMD Type MOSFETTransistorsN-Channel Self Protected Enhancement Mode MOSFETZXMS6004FF(KXMS6004FF) FeaturesSOT-23Unit: mm+0.12.9-0.1 Compact high power dissipation package+0.10.4 -0.1 Low input current3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp)12+0.1+0.050.95-0.1 0.1 -0.01 Therm

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