ZXMS6005DG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMS6005DG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SOT223

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ZXMS6005DG Datasheet (PDF)

..1. Size:556K diodes
zxms6005dg.pdf

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

0.1. Size:242K diodes
zxms6005dgq.pdf

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

0.2. Size:524K diodes
zxms6005dgq-13.pdf

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

5.1. Size:247K diodes
zxms6005dt8.pdf

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

5.2. Size:348K diodes
zxms6005dt8q.pdf

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

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