Справочник MOSFET. ZXMS6005DG

 

ZXMS6005DG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMS6005DG
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 3 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 2 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для ZXMS6005DG

 

 

ZXMS6005DG Datasheet (PDF)

 ..1. Size:556K  diodes
zxms6005dg.pdf

ZXMS6005DG
ZXMS6005DG

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

 0.1. Size:242K  diodes
zxms6005dgq.pdf

ZXMS6005DG
ZXMS6005DG

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 0.2. Size:524K  diodes
zxms6005dgq-13.pdf

ZXMS6005DG
ZXMS6005DG

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 5.1. Size:247K  diodes
zxms6005dt8.pdf

ZXMS6005DG
ZXMS6005DG

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 5.2. Size:348K  diodes
zxms6005dt8q.pdf

ZXMS6005DG
ZXMS6005DG

ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact Dual Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 1.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Aut

Другие MOSFET... BSP75N , ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , HY1906P , ZXMS6005DT8 , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 .

 

 
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