2SK799 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK799
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 450
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35
nS
Cossⓘ - Capacitancia
de salida: 500
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5
Ohm
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de MOSFET 2SK799
Principales características: 2SK799
9.5. Size:145K panasonic
2sk795.pdf 
"2SK795" "2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf
isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf
isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf
isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf
isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf
isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =850V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, convert
Otros transistores... 2SK700
, 2SK701
, 2SK702
, 2SK703
, 2SK705
, 2SK724
, 2SK738
, 2SK739
, 5N65
, 2SK801
, 2SK802
, 2SK814
, 2SK875
, 2SK876
, 2SK897
, 2SK897-MR
, 2SK899
.
