2SK799 Todos los transistores

 

2SK799 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK799

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 4000 pF

Resistencia drenaje-fuente RDS(on): 0.33 Ohm

Empaquetado / Estuche: TO247

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2SK799 Datasheet (PDF)

5.1. 2sk792.pdf Size:43K _update

2SK799



5.2. 2sk795.pdf Size:145K _update

2SK799
2SK799

查询"2SK795"供应商 查询"2SK795"供应商

 5.3. 2sk790.pdf Size:229K _update

2SK799
2SK799

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5.4. 2sk796-a.pdf Size:71K _update

2SK799



 5.5. 2sk791.pdf Size:101K _update

2SK799



5.6. 2sk794.pdf Size:43K _update

2SK799



5.7. 2sk793.pdf Size:237K _update-mosfet

2SK799
2SK799

isc N-Channel MOSFET Transistor 2SK793 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =850V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, convert

5.8. 2sk790.pdf Size:247K _update-mosfet

2SK799
2SK799

isc N-Channel MOSFET Transistor 2SK790 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.9. 2sk793.pdf Size:43K _toshiba2

2SK799



5.10. 2sk796a.pdf Size:197K _inchange_semiconductor

2SK799
2SK799

isc N-Channel MOSFET Transistor 2SK796A DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.11. 2sk796.pdf Size:197K _inchange_semiconductor

2SK799
2SK799

isc N-Channel MOSFET Transistor 2SK796 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.12. 2sk794.pdf Size:204K _inchange_semiconductor

2SK799
2SK799

isc N-Channel MOSFET Transistor 2SK794 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Otros transistores... 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , BF245A , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 .

 

 
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