2SK799 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK799
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de 2SK799 MOSFET

- Selección ⓘ de transistores por parámetros

2SK799 Datasheet (PDF)

..1. Size:3136K 1
2sk799.pdf pdf_icon

9.1. Size:43K toshiba
2sk794.pdf pdf_icon

9.2. Size:101K toshiba
2sk791.pdf pdf_icon

9.3. Size:43K toshiba
2sk792.pdf pdf_icon

9.4. Size:43K toshiba
2sk793.pdf pdf_icon

9.5. Size:145K panasonic
2sk795.pdf pdf_icon

"2SK795""2SK795"

9.6. Size:71K panasonic
2sk796-a.pdf pdf_icon

9.7. Size:197K inchange semiconductor
2sk796a.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.8. Size:204K inchange semiconductor
2sk794.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.9. Size:197K inchange semiconductor
2sk796.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.10. Size:247K inchange semiconductor
2sk790.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

9.11. Size:237K inchange semiconductor
2sk793.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert

Otros transistores... 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , 4435 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 .