Справочник MOSFET. 2SK799

 

2SK799 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK799
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO247

 Аналог (замена) для 2SK799

 

 

2SK799 Datasheet (PDF)

 ..1. Size:3136K  1
 2sk799.pdf

2SK799 2SK799

 9.1. Size:43K  toshiba
 2sk794.pdf

2SK799

 9.2. Size:101K  toshiba
 2sk791.pdf

2SK799

 9.3. Size:43K  toshiba
 2sk792.pdf

2SK799

 9.4. Size:43K  toshiba
 2sk793.pdf

2SK799

 9.5. Size:145K  panasonic
 2sk795.pdf

2SK799 2SK799

"2SK795""2SK795"

 9.6. Size:71K  panasonic
 2sk796-a.pdf

2SK799

 9.7. Size:197K  inchange semiconductor
 2sk796a.pdf

2SK799 2SK799

isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.8. Size:204K  inchange semiconductor
 2sk794.pdf

2SK799 2SK799

isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.9. Size:197K  inchange semiconductor
 2sk796.pdf

2SK799 2SK799

isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.10. Size:247K  inchange semiconductor
 2sk790.pdf

2SK799 2SK799

isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.11. Size:237K  inchange semiconductor
 2sk793.pdf

2SK799 2SK799

isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert

Другие MOSFET... 2SK700 , 2SK701 , 2SK702 , 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , AON7410 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 .

 

 
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