2SK799
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK799
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 35
ns
Cossⓘ - Выходная емкость: 500
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5
Ohm
Тип корпуса:
TO247
- подбор MOSFET транзистора по параметрам
2SK799
Datasheet (PDF)
9.5. Size:145K panasonic
2sk795.pdf 
"2SK795""2SK795"
9.7. Size:197K inchange semiconductor
2sk796a.pdf 
isc N-Channel MOSFET Transistor 2SK796ADESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.8. Size:204K inchange semiconductor
2sk794.pdf 
isc N-Channel MOSFET Transistor 2SK794DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.9. Size:197K inchange semiconductor
2sk796.pdf 
isc N-Channel MOSFET Transistor 2SK796DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
9.10. Size:247K inchange semiconductor
2sk790.pdf 
isc N-Channel MOSFET Transistor 2SK790DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve
9.11. Size:237K inchange semiconductor
2sk793.pdf 
isc N-Channel MOSFET Transistor 2SK793DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =850V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, convert
Другие MOSFET... 2SK700
, 2SK701
, 2SK702
, 2SK703
, 2SK705
, 2SK724
, 2SK738
, 2SK739
, 4N60
, 2SK801
, 2SK802
, 2SK814
, 2SK875
, 2SK876
, 2SK897
, 2SK897-MR
, 2SK899
.
History: WSP4407A
| NCV8402D
| IRLMS1902
| STW24NM60N
| FQPF3N80CYDTU
| AFN4440W
| AFN6530S
