2SJ656 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ656
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0755 Ohm
Paquete / Cubierta: TO220ML

Búsqueda de reemplazo de MOSFET 2SJ656

2SJ656 Datasheet (PDF)

..1. Size:46K sanyo
2sj656.pdf

Ordering number : ENN76842SJ656P-Channl Silicon MOSFET2SJ656General-Purpose Switching DeviceFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ656]4.5 Motor drive, DC / DC converter.10.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANY

9.1. Size:47K sanyo
2sj652.pdf

Ordering number : ENN76252SJ652P-Channl Silicon MOSFET2SJ652General-Purpose Switching Device ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ652] Motor drive, DC / DC converter.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.

9.2. Size:33K sanyo
2sj650.pdf

Ordering number : ENN75002SJ650P-Channl Silicon MOSFET2SJ650DC / DC Converter ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A 4V drive.[2SJ650]4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220MLAbsolute Maximum Ratings

9.3. Size:217K sanyo
2sj652-1e.pdf

2SJ652Ordering number : EN7625ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ652ApplicationsFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 V

9.4. Size:38K sanyo
2sj651.pdf

Ordering number : EN7501A 2SJ651P-Channel Silicon MOSFET2SJ651DC / DC Converter ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Curr

9.5. Size:42K sanyo
2sj655.pdf

Ordering number : EN7712A 2SJ655SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ655ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings Un

9.6. Size:255K onsemi
2sj652.pdf

Ordering number : EN7625A2SJ652P-Channel Power MOSFEThttp://onsemi.com 60V, 28A, 38m , TO-220F-3SGFeatures ON-resistance RDS(on)1=28.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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