2SJ656 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ656

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 74 nC

Resistencia drenaje-fuente RDS(on): 0.0755 Ohm

Empaquetado / Estuche: TO220ML

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2SJ656 Datasheet (PDF)

1.1. 2sj656.pdf Size:46K _sanyo

Ordering number : ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features Package Dimensions � Low ON-resistance. unit : mm � Ultrahigh-speed switching. 2063A � 4V drive. [2SJ656] 4.5 � Motor drive, DC / DC converter. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220M

5.1. 2sj655.pdf Size:42K _update

Ordering number : EN7712A 2SJ655 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ655 Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Un

5.2. 2sj650.pdf Size:33K _upd

Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2063A • 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings

5.3. 2sj651.pdf Size:38K _upd

Ordering number : EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Curr

5.4. 2sj652-1e.pdf Size:217K _upd

2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features • ON-resistance RDS(on)1=28.5m (typ.) Ω • Input capacitance Ciss=4360pF (typ.) • 4V drive Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V

5.5. 2sj652.pdf Size:47K _sanyo

Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions � Low ON-resistance. unit : mm � Ultrahigh-speed switching. 2063A � 4V drive. [2SJ652] � Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SA

Otros transistores... ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 , ZXMHN6A07T8 , 2SK3115B , STU437S , STU435S , 2SJ652 , J113 , 2SK2394 , 2SK3557 , 2SK3666 , 2SK3703 , 2SK3704 , 2SK3708 , 2SK3745LS , 2SK3746 .

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