2SK3820 Todos los transistores

 

2SK3820 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3820
   Código: K3820
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.2 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SMP

 Búsqueda de reemplazo de MOSFET 2SK3820

 

2SK3820 Datasheet (PDF)

 ..1. Size:53K  sanyo
2sk3820.pdf

2SK3820
2SK3820

Ordering number : ENN8147 2SK3820N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3820ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 0.1. Size:357K  inchange semiconductor
2sk3820b.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3820BFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.2. Size:283K  inchange semiconductor
2sk3820k.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3820KFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:45K  1
2sk3822.pdf

2SK3820
2SK3820

Ordering number : ENN8014 2SK3822N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3822ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.2. Size:38K  1
2sk3828.pdf

2SK3820
2SK3820

Ordering number : ENN8245 2SK3828N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3828ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.3. Size:38K  1
2sk3825.pdf

2SK3820
2SK3820

Ordering number : ENN8242 2SK3825N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3825ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.4. Size:40K  sanyo
2sk3821.pdf

2SK3820
2SK3820

Ordering number : ENN8058 2SK3821N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3821ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.5. Size:38K  sanyo
2sk3826.pdf

2SK3820
2SK3820

Ordering number : ENN8243 2SK3826N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3826ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.6. Size:38K  sanyo
2sk3827.pdf

2SK3820
2SK3820

Ordering number : ENN8244 2SK3827N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3827ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.7. Size:38K  sanyo
2sk3829.pdf

2SK3820
2SK3820

Ordering number : ENN8031 2SK3829N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3829ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.8. Size:38K  sanyo
2sk3823.pdf

2SK3820
2SK3820

Ordering number : ENN8241 2SK3823N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3823ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.9. Size:38K  sanyo
2sk3824.pdf

2SK3820
2SK3820

Ordering number : ENN8230 2SK3824N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3824ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.10. Size:60K  inchange semiconductor
2sk382.pdf

2SK3820
2SK3820

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulatorDC-DC converter, RF amplifiersand ultrasonic

 8.11. Size:282K  inchange semiconductor
2sk3821k.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3821KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.12. Size:289K  inchange semiconductor
2sk3826.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3826FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.13. Size:356K  inchange semiconductor
2sk3821b.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3821BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.14. Size:289K  inchange semiconductor
2sk3827.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3827FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.15. Size:289K  inchange semiconductor
2sk3828.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3828FEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.16. Size:273K  inchange semiconductor
2sk3829.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3829FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.17. Size:357K  inchange semiconductor
2sk3822b.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3822BFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.18. Size:283K  inchange semiconductor
2sk3822k.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3822KFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.19. Size:288K  inchange semiconductor
2sk3823.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3823FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.20. Size:289K  inchange semiconductor
2sk3825.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3825FEATURESDrain Current : I = 74A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.21. Size:288K  inchange semiconductor
2sk3824.pdf

2SK3820
2SK3820

isc N-Channel MOSFET Transistor 2SK3824FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... 2SK3708 , 2SK3745LS , 2SK3746 , 2SK3747 , 2SK3748 , 2SK3796 , 2SK3816 , 2SK3817 , IRFB3306 , 2SK4043LS , 2SK4065 , 2SK4066 , 2SK4085LS , 2SK4087LS , 2SK4088LS , 2SK4089LS , 2SK4099LS .

 

 
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