2SK3820 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3820
Código: K3820
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.2 V
Qgⓘ - Carga de la puerta: 44
nC
trⓘ - Tiempo de subida: 34
nS
Cossⓘ - Capacitancia
de salida: 160
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06
Ohm
Encapsulados: SMP
Búsqueda de reemplazo de 2SK3820 MOSFET
- Selección ⓘ de transistores por parámetros
2SK3820 datasheet
..1. Size:53K sanyo
2sk3820.pdf 
Ordering number ENN8147 2SK3820 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3820 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
0.1. Size:357K inchange semiconductor
2sk3820b.pdf
isc N-Channel MOSFET Transistor 2SK3820B FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.2. Size:283K inchange semiconductor
2sk3820k.pdf
isc N-Channel MOSFET Transistor 2SK3820K FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:45K 1
2sk3822.pdf
Ordering number ENN8014 2SK3822 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3822 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.2. Size:38K 1
2sk3828.pdf
Ordering number ENN8245 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3828 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.3. Size:38K 1
2sk3825.pdf
Ordering number ENN8242 2SK3825 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3825 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.4. Size:40K sanyo
2sk3821.pdf
Ordering number ENN8058 2SK3821 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3821 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.5. Size:38K sanyo
2sk3826.pdf
Ordering number ENN8243 2SK3826 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3826 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.6. Size:38K sanyo
2sk3827.pdf
Ordering number ENN8244 2SK3827 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3827 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.7. Size:38K sanyo
2sk3829.pdf
Ordering number ENN8031 2SK3829 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3829 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.8. Size:38K sanyo
2sk3823.pdf
Ordering number ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3823 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.9. Size:38K sanyo
2sk3824.pdf
Ordering number ENN8230 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3824 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS
8.10. Size:60K inchange semiconductor
2sk382.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulator DC-DC converter, RF amplifiers and ultrasonic
8.11. Size:282K inchange semiconductor
2sk3821k.pdf
isc N-Channel MOSFET Transistor 2SK3821K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.12. Size:289K inchange semiconductor
2sk3826.pdf
isc N-Channel MOSFET Transistor 2SK3826 FEATURES Drain Current I = 26A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.13. Size:356K inchange semiconductor
2sk3821b.pdf
isc N-Channel MOSFET Transistor 2SK3821B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:289K inchange semiconductor
2sk3827.pdf
isc N-Channel MOSFET Transistor 2SK3827 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.15. Size:289K inchange semiconductor
2sk3828.pdf
isc N-Channel MOSFET Transistor 2SK3828 FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.16. Size:273K inchange semiconductor
2sk3829.pdf
isc N-Channel MOSFET Transistor 2SK3829 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.17. Size:357K inchange semiconductor
2sk3822b.pdf
isc N-Channel MOSFET Transistor 2SK3822B FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.18. Size:283K inchange semiconductor
2sk3822k.pdf
isc N-Channel MOSFET Transistor 2SK3822K FEATURES Drain Current I = 52A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.19. Size:288K inchange semiconductor
2sk3823.pdf
isc N-Channel MOSFET Transistor 2SK3823 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 27.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.20. Size:289K inchange semiconductor
2sk3825.pdf
isc N-Channel MOSFET Transistor 2SK3825 FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.21. Size:288K inchange semiconductor
2sk3824.pdf
isc N-Channel MOSFET Transistor 2SK3824 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
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