2SK3820
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK3820
Маркировка: K3820
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(off)|ⓘ -
Минимальное напряжение отсечки: 1.2
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 26
A
Tj ⓘ - Максимальная температура канала: 150
°C
Qg ⓘ -
Общий заряд затвора: 44
nC
tr ⓘ -
Время нарастания: 34
ns
Cossⓘ - Выходная емкость: 160
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06
Ohm
Тип корпуса: SMP
Аналог (замена) для 2SK3820
-
подбор ⓘ MOSFET транзистора по параметрам
2SK3820
Datasheet (PDF)
..1. Size:53K sanyo
2sk3820.pdf 
Ordering number : ENN8147 2SK3820N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3820ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
0.1. Size:357K inchange semiconductor
2sk3820b.pdf 
isc N-Channel MOSFET Transistor 2SK3820BFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.2. Size:283K inchange semiconductor
2sk3820k.pdf 
isc N-Channel MOSFET Transistor 2SK3820KFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:45K 1
2sk3822.pdf 
Ordering number : ENN8014 2SK3822N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3822ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.2. Size:38K 1
2sk3828.pdf 
Ordering number : ENN8245 2SK3828N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3828ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.3. Size:38K 1
2sk3825.pdf 
Ordering number : ENN8242 2SK3825N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3825ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.4. Size:40K sanyo
2sk3821.pdf 
Ordering number : ENN8058 2SK3821N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3821ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.5. Size:38K sanyo
2sk3826.pdf 
Ordering number : ENN8243 2SK3826N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3826ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.6. Size:38K sanyo
2sk3827.pdf 
Ordering number : ENN8244 2SK3827N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3827ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.7. Size:38K sanyo
2sk3829.pdf 
Ordering number : ENN8031 2SK3829N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3829ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.8. Size:38K sanyo
2sk3823.pdf 
Ordering number : ENN8241 2SK3823N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3823ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.9. Size:38K sanyo
2sk3824.pdf 
Ordering number : ENN8230 2SK3824N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3824ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.10. Size:60K inchange semiconductor
2sk382.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulatorDC-DC converter, RF amplifiersand ultrasonic
8.11. Size:282K inchange semiconductor
2sk3821k.pdf 
isc N-Channel MOSFET Transistor 2SK3821KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.12. Size:289K inchange semiconductor
2sk3826.pdf 
isc N-Channel MOSFET Transistor 2SK3826FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.13. Size:356K inchange semiconductor
2sk3821b.pdf 
isc N-Channel MOSFET Transistor 2SK3821BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.14. Size:289K inchange semiconductor
2sk3827.pdf 
isc N-Channel MOSFET Transistor 2SK3827FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.15. Size:289K inchange semiconductor
2sk3828.pdf 
isc N-Channel MOSFET Transistor 2SK3828FEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.16. Size:273K inchange semiconductor
2sk3829.pdf 
isc N-Channel MOSFET Transistor 2SK3829FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.17. Size:357K inchange semiconductor
2sk3822b.pdf 
isc N-Channel MOSFET Transistor 2SK3822BFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.18. Size:283K inchange semiconductor
2sk3822k.pdf 
isc N-Channel MOSFET Transistor 2SK3822KFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.19. Size:288K inchange semiconductor
2sk3823.pdf 
isc N-Channel MOSFET Transistor 2SK3823FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.20. Size:289K inchange semiconductor
2sk3825.pdf 
isc N-Channel MOSFET Transistor 2SK3825FEATURESDrain Current : I = 74A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.21. Size:288K inchange semiconductor
2sk3824.pdf 
isc N-Channel MOSFET Transistor 2SK3824FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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.
History: STB8NM60T4
| SM2558NUB
| WST2005
