2SK814 Todos los transistores

 

2SK814 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK814
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 2SK814

 

2SK814 Datasheet (PDF)

 ..1. Size:507K  1
2sk814.pdf

2SK814

 9.1. Size:355K  1
2sk815.pdf

2SK814 2SK814

 9.2. Size:354K  1
2sk810.pdf

2SK814 2SK814

 9.3. Size:363K  1
2sk811.pdf

2SK814 2SK814

 9.4. Size:240K  nec
2sk819.pdf

2SK814 2SK814

2SK819 PCB24

 9.5. Size:174K  nec
2sk812.pdf

2SK814 2SK814

 9.6. Size:176K  nec
2sk817.pdf

2SK814 2SK814

 9.7. Size:146K  panasonic
2sk818-a.pdf

2SK814 2SK814

 9.8. Size:289K  inchange semiconductor
2sk810.pdf

2SK814 2SK814

isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.9. Size:279K  inchange semiconductor
2sk811.pdf

2SK814 2SK814

isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.10. Size:203K  inchange semiconductor
2sk818a.pdf

2SK814 2SK814

isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

 9.11. Size:279K  inchange semiconductor
2sk817.pdf

2SK814 2SK814

isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.12. Size:203K  inchange semiconductor
2sk818.pdf

2SK814 2SK814

isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

Otros transistores... 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , IRF2807 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 .

 

 
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