2SK814 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK814
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO220F
2SK814 Datasheet (PDF)
2sk810.pdf
isc N-Channel MOSFET Transistor 2SK810FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk811.pdf
isc N-Channel MOSFET Transistor 2SK811FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk818a.pdf
isc N-Channel MOSFET Transistor 2SK818ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk817.pdf
isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk818.pdf
isc N-Channel MOSFET Transistor 2SK818DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Другие MOSFET... 2SK703 , 2SK705 , 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , IRF2807 , 2SK875 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918