2SK4209 Todos los transistores

 

2SK4209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4209

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 190 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 75 nC

Resistencia drenaje-fuente RDS(on): 0.83 Ohm

Empaquetado / Estuche: TO3PB

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2SK4209 Datasheet (PDF)

1.1. 2sk4209.pdf Size:496K _sanyo

2SK4209
2SK4209

2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4209 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-So

4.1. 2sk4202-s19-ay.pdf Size:297K _update

2SK4209
2SK4209

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk4201-s19-ay.pdf Size:291K _update

2SK4209
2SK4209

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. 2sk4207 090929.pdf Size:208K _toshiba

2SK4209
2SK4209

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm Ф3.2±0.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 ? (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.4. 2sk4200ls.pdf Size:272K _sanyo

2SK4209
2SK4209

2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4200LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications

Otros transistores... 2SK4117LS , 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , BS170 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C .

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