All MOSFET. 2SK4209 Datasheet

 

2SK4209 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK4209

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 75 nC

Maximum Drain-Source On-State Resistance (Rds): 0.83 Ohm

Package: TO3PB

2SK4209 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK4209 Datasheet (PDF)

1.1. 2sk4209.pdf Size:496K _sanyo

2SK4209
2SK4209

2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4209 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-So

4.1. 2sk4202-s19-ay.pdf Size:297K _update

2SK4209
2SK4209

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk4201-s19-ay.pdf Size:291K _update

2SK4209
2SK4209

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. 2sk4207 090929.pdf Size:208K _toshiba

2SK4209
2SK4209

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm Ф3.2±0.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 ? (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

4.4. 2sk4200ls.pdf Size:272K _sanyo

2SK4209
2SK4209

2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4200LS Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications

Datasheet: 2SK4117LS , 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , BS170 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C .

 

 
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