2SK4209 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK4209
   Marking Code: K4209
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.08 Ohm
   Package: TO3PB

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2SK4209 Datasheet (PDF)

..1. Size:496K sanyo
2sk4209.pdf pdf_icon

2SK4209Ordering number : ENA1516SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4209ApplicationsFeatures Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitD

8.1. Size:272K 1
2sk4204ls.pdf pdf_icon

2SK4204LSOrdering number : ENA1290SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4204LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

8.2. Size:273K 1
2sk4203ls.pdf pdf_icon

2SK4203LSOrdering number : ENA1289SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4203LSApplicationsFeatures 4V drive. Avalanche resistance guarantee.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 45 VGate-to-Source Voltage VGSS 20 VDrain Cur

8.3. Size:208K toshiba
2sk4207.pdf pdf_icon

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4207 Swiching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON-resistance: RDS (ON) = 0.78 (typ.) High forward transfer admittance:|Yfs| = 11 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID

8.4. Size:272K sanyo
2sk4200ls.pdf pdf_icon

2SK4200LSOrdering number : ENA1333SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4200LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

8.5. Size:297K renesas
2sk4202-s19-ay.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. Size:291K renesas
2sk4201-s19-ay.pdf pdf_icon

8.7. Size:288K inchange semiconductor
2sk4201.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4201FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.8. Size:282K inchange semiconductor
2sk4207.pdf pdf_icon

iscN-Channel MOSFET Transistor 2SK4207FEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

8.9. Size:279K inchange semiconductor
2sk4204ls.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4204LSFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.10. Size:280K inchange semiconductor
2sk4203ls.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4203LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 45V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

8.11. Size:288K inchange semiconductor
2sk4202.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4202FEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.12. Size:279K inchange semiconductor
2sk4200ls.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4200LSFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.73(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: 2SK4117LS , 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , 2SK4197LS , 2SK4198LS , IRF540 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C .

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2SK4209 MOSFET. Datasheet pdf. Equivalent

2SK4209 Datasheet (PDF)

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