3LN01C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3LN01C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 5.9 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm

Encapsulados: CP

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3LN01C datasheet

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 3ln01c.pdf pdf_icon

3LN01C

Ordering number EN6260A 3LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10

 9.1. Size:47K  sanyo
 3ln01m.pdf pdf_icon

3LN01C

Ordering number EN6138A 3LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10

 9.2. Size:48K  sanyo
 3ln01s.pdf pdf_icon

3LN01C

Ordering number EN6957A 3LN01S SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10

 9.3. Size:260K  sanyo
 3ln01ss.pdf pdf_icon

3LN01C

Ordering number EN6546A 3LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 3LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

MOSTRAR MÁS

Otros transistores... 2SK4196LS, 2SK4197LS, 2SK4198LS, 2SK4209, 2SK4210, 2SK4221, 2SK4222, 2SK932, IRFP460, 3LN01M, 3LN01S, 3LP01C, 3LP01M, 3LP01S, 5LN01C, 5LN01M, 5LN01SP