5LN01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 5LN01M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 4.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm
   Paquete / Cubierta: MCP

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5LN01M Datasheet (PDF)

..1. Size:250K sanyo
5ln01m.pdf

Ordering number : EN6137A5LN01MSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01MApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

..2. Size:253K onsemi
5ln01m.pdf

Ordering number : EN6137C5LN01MN-Channel Small Signal MOSFEThttp://onsemi.com50V, 0.1A, 7.8 , Single MCPFeatures Low ON-resistance Ultrahigh-speed switching 1.5V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 50 VGate to Source Voltage VGSS 10 VDrain Current (DC) ID 0.1 AD

9.1. Size:249K sanyo
5ln01c.pdf

Ordering number : EN6555A5LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

9.2. Size:250K sanyo
5ln01ss.pdf

Ordering number : EN6560A5LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS

9.3. Size:27K sanyo
5ln01n.pdf

Ordering number : ENN65585LN01NN-Channel Silicon MOSFET5LN01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LN01N]5.04.04.00.450.50.440.451 : Source1 2 32 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter

9.4. Size:36K sanyo
5ln01s.pdf

Ordering number : EN6561A5LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10

9.5. Size:97K sanyo
5ln01sp.pdf

Ordering number : ENN65595LN01SPN-Channel Silicon MOSFET5LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C

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