5LN01M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 5LN01M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 4.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.8 Ohm

Encapsulados: MCP

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5LN01M datasheet

 ..1. Size:250K  sanyo
5ln01m.pdf pdf_icon

5LN01M

Ordering number EN6137A 5LN01M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01M Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

 ..2. Size:253K  onsemi
5ln01m.pdf pdf_icon

5LN01M

Ordering number EN6137C 5LN01M N-Channel Small Signal MOSFET http //onsemi.com 50V, 0.1A, 7.8 , Single MCP Features Low ON-resistance Ultrahigh-speed switching 1.5V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS 10 V Drain Current (DC) ID 0.1 A D

 9.1. Size:249K  sanyo
5ln01c.pdf pdf_icon

5LN01M

Ordering number EN6555A 5LN01C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01C Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 10

 9.2. Size:250K  sanyo
5ln01ss.pdf pdf_icon

5LN01M

Ordering number EN6560A 5LN01SS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 5LN01SS Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS

Otros transistores... 2SK932, 3LN01C, 3LN01M, 3LN01S, 3LP01C, 3LP01M, 3LP01S, 5LN01C, IRFB4227, 5LN01SP, 5LN01SS, 5LP01M, ATP101, ATP102, ATP103, ATP104, ATP106